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| INFRA-RED 1. 2. 2.1 2.2 Item No.: 131244 This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-GaAlAs 365 120 280 typ. p-Epitaxy GaAs n-Epitaxy GaAs n-Substrate GaAs 365 n-Electrode 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions min typ 1,25 max 1,45 10 Unit V A mW IF = 20 mA IR = 5 V IF = 20 mA output Power * e IF = 50 mA Switching time tr, tf IF = 20 mA Peak wavelength IF = 20 mA P Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. e typ min max 3,0 7,5 500 950 ns nm Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 131244
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